Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof
地域：
Villach
摘要
A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An active area includes a plurality of spicular trenches extending through the body region and into the drift region. Each spicular trench in the active area has a lower end which together define a lower end of the upper drift region extending towards a first side and a lower drift region extending from the lower end of the upper drift region towards a second side. The edge termination area includes spicular termination trenches extending at least into the upper drift region. A surface doping region arranged in the upper drift region in the edge termination area extends to the first side, is spaced apart from the lower end of the upper drift region, and has a net doping concentration lower than that of the upper drift region.
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Depending on the actual design of the spicular trenches, when seen in plan projection onto the first side 101, the gate trenches 140, or gate electrodes 141, may form gate crossings 143 having a different layout.
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