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Field effect transistor contact with reduced contact resistance using implantation process

專利號
US10868178B2
公開日期
2020-12-15
申請人
Taiwan Semiconductor Manufacturing Co., Ltd.（TW Hsinchu）
發(fā)明人
Su-Hao Liu; Kuo-Ju Chen; Chun-Hung Wu; Chia-Cheng Chen; Liang-Yin Chen; Huicheng Chang; Ying-Lang Wang
IPC分類
H01L29/165; H01L29/78; H01L27/088; H01L21/3115; H01L29/66; H01L21/8234; H01L21/02; H01L21/3215; H01L29/161
技術領域
drain,regions,gallium,source,dopant,in,species,may,layer,germanium
地域： Hsinchu

摘要

Embodiments disclosed herein relate generally to forming an ultra-shallow junction having high dopant concentration and low contact resistance in a p-type source/drain region. In an embodiment, a method includes forming a source/drain region in an active area on a substrate, the source/drain region comprising germanium, performing an ion implantation process using gallium (Ga) to form an amorphous region in the source/drain region, performing an ion implantation process using a dopant into the amorphous region, and subjecting the amorphous region to a thermal process.

說明書

Referring to FIG. 4, a contact etch stop layer (CESL) 296 and a first interlayer dielectric (ILD) 297 are sequentially formed on surfaces of the source/drain regions 292, sidewalls and top surfaces of the gate spacers 286, top surfaces of the masks 284, and top surfaces of the isolation regions 278 using any suitable deposition technique. The CESL 296 is deposited conformally and may include or be silicon nitride, silicon carbon nitride, carbon nitride, the like, or a combination thereof. The first ILD 297 may include or be tetraethylorthosilicate (TEOS) oxide, silicon dioxide, a low-k dielectric material (e.g., a material having a dielectric constant lower than silicon dioxide), or the like. A chemical mechanical planarization (CMP) process may then be performed to planarize the first ILD 297 and the CESL 296 and to remove the masks 284 of the dummy gate structures 251, thereby leveling the top surface of the first ILD 297 and CESL 296 with the top surfaces of the dummy gates 282.

權利要求

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