After the formation of the source/drain contact openings 232, a pre-amorphorized implantation (PAI) process 231 is performed to amorphize a portion of the exposed source/drain regions 292 where silicide regions are to be formed. The PAI process injects an impurity species into the source/drain regions 292 to form an amorphous region 219, as shown in FIG. 5. In some examples, the amorphous region 219 may have a depth from about 2 nm to about 20 nm, measuring from a top surface of the source/drain regions 292. In an embodiment, the PAI process is an ion implantation process which introduces first species into the exposed source/drain regions 292 such that at least a top portion of the source/drain regions 292 is converted into an amorphous structure. The amorphous regions 219 can prevent subsequently implanted dopants/impurities from channeling through the spaces between the crystal lattice structure and reaching depths greater than desired. Therefore, the subsequent dopants/impurities can be confined at a region within the amorphous regions 219 and/or proximate a top surface of the source/drain regions 292. As a result, a contact resistance between the source/drain regions 292 and a conductive feature that is subsequently formed can be greatly reduced.