In yet another embodiment, a structure is provided. The structure includes an active area on a substrate, the active area comprising a source/drain region, the source/drain region having a silicide layer disposed thereon, a dielectric layer over the active area, and a conductive feature through the dielectric layer to the active area and contacting the source/drain region at the silicide layer. The source/drain region includes a first region proximate a top surface of the source/drain region and overlapped with at least a portion of the silicide layer, the first region having a first concentration of germanium, the first region comprising gallium, a peak concentration of gallium being proximate the top surface of the source/drain region, a concentration of gallium decreasing in the source/drain region from the peak concentration of gallium in a direction away from the top surface of the source/drain region, and a second region disposed between the first region and the substrate, the second region having a second concentration of germanium lower than the first concentration of germanium.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.