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Fin-type field effect transistor structure and manufacturing method thereof

專利號
US10868179B2
公開日期
2020-12-15
申請人
Taiwan Semiconductor Manufacturing Co., Ltd.（TW Hsinchu）
發(fā)明人
Che-Cheng Chang; Chih-Han Lin
IPC分類
H01L29/78; H01L29/10; H01L29/66
技術(shù)領(lǐng)域
etching,fins,strained,finfet,layer,stop,recess,insulators,stack,in
地域： Hsinchu

摘要

A fin-type field effect transistor comprising a substrate, a plurality of insulators, at least one gate stack and strained material portions is described. The substrate has a plurality of fins thereon and the fin comprises a stop layer embedded therein. The plurality of insulators is disposed on the substrate and between the plurality of fins. The at least one gate stack is disposed over the plurality of fins and on the plurality of insulators. The strained material portions are disposed on two opposite sides of the at least one gate stack.

說明書

In accordance with the embodiments, FIG. 1 is an exemplary flow chart showing the process steps of the manufacturing method for forming a FinFET. The various process steps of the process flow illustrated in FIG. 1 may comprise multiple process steps as discussed below. FIGS. 2A-3G are the perspective views and cross-sectional views showing the FinFET at various stages of the manufacturing method for forming the FinFET according to some embodiments of the present disclosure. It is to be noted that the process steps described herein cover a portion of the manufacturing processes used to fabricate a FinFET device.

權(quán)利要求

1
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