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FinFET device and methods of forming the same

專利號
US10868183B2
公開日期
2020-12-15
申請人
Taiwan Semiconductor Manufacturing Company, Ltd.（TW Hsinchu）
發(fā)明人
Shahaji B. More; Shih-Chieh Chang; Cheng-Han Lee
IPC分類
H01L29/78; H01L29/66; H01L29/10; H01L29/08; H01L27/092; H01L29/423; H01L21/768; H01L21/8238; H01L21/225; H01L29/161
技術(shù)領(lǐng)域
germanium,dopant,fin,in,region,finfet,layer,epitaxial,segment,silicon
地域： Hsinchu

摘要

A semiconductor device includes a substrate; a fin protruding above the substrate, the fin including a compound semiconductor material that includes a semiconductor material and a first dopant, the first dopant having a different lattice constant than the semiconductor material, where a concentration of the first dopant in the fin changes along a first direction from an upper surface of the fin toward the substrate; a gate structure over the fin; a channel region in the fin and directly under the gate structure; and source/drain regions on opposing sides of the gate structure, the source/drain regions including a second dopant, where a concentration of the second dopant at a first location within the channel region is higher than that at a second location within the channel region, where the concentration of the first dopant at the first location is lower than that at the second location.

說明書

In some embodiments, the silicon germanium layer 53 is formed by an epitaxy process using precursors comprising silicon and germanium. For example, a first precursor comprising germane (GeH4), digermane (Ge2H6), or combinations thereof, may be used as the precursor comprising germanium, and a second precursor comprising silane (SiH4), dichlorosilane (SiH2Cl2), or combinations thereof, may be used as the precursor comprising silicon. In some embodiments, the epitaxy process is performed using GeH4, SiH4, and HCl as precursors. In some embodiments, the epitaxy process is performed using GeH4, Ge2H6, SiH4, SiH2Cl2, and HCl as precursors. In yet another embodiment, the epitaxy process is performed using GeH4, HCl, SiH4, and SiH2Cl2 as precursors. The epitaxy process may be performed in a deposition chamber. Carrier gases, such as Ar, He, N2, H2, combinations thereof, or the like, may be used to carrier the precursors into the deposition chamber. As the epitaxy process proceeds, the silicon germanium layer 53 grows on the epitaxial material 52 along the upward direction of FIG. 6.

權(quán)利要求

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