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FinFET device and methods of forming the same

專(zhuān)利號(hào)
US10868183B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
Taiwan Semiconductor Manufacturing Company, Ltd.（TW Hsinchu）
發(fā)明人
Shahaji B. More; Shih-Chieh Chang; Cheng-Han Lee
IPC分類(lèi)
H01L29/78; H01L29/66; H01L29/10; H01L29/08; H01L27/092; H01L29/423; H01L21/768; H01L21/8238; H01L21/225; H01L29/161
技術(shù)領(lǐng)域
germanium,dopant,fin,in,region,finfet,layer,epitaxial,segment,silicon
地域： Hsinchu

摘要

A semiconductor device includes a substrate; a fin protruding above the substrate, the fin including a compound semiconductor material that includes a semiconductor material and a first dopant, the first dopant having a different lattice constant than the semiconductor material, where a concentration of the first dopant in the fin changes along a first direction from an upper surface of the fin toward the substrate; a gate structure over the fin; a channel region in the fin and directly under the gate structure; and source/drain regions on opposing sides of the gate structure, the source/drain regions including a second dopant, where a concentration of the second dopant at a first location within the channel region is higher than that at a second location within the channel region, where the concentration of the first dopant at the first location is lower than that at the second location.

說(shuō)明書(shū)

The epitaxial source/drain regions 82 in the region 50C, e.g., the PMOS region, may be formed by masking the region 50B, e.g., the NMOS region, and epitaxially growing source/drain regions 82 in the recesses in the region 50C. The epitaxial source/drain regions 82 may include any acceptable material, such as appropriate for p-type FinFETs. For example, if the fin 58 is silicon, the epitaxial source/drain regions 82 in the region 50C may comprise SiGe, SiGeB, Ge, GeSn, or the like. The epitaxial source/drain regions 82 in the region 50C may also have surfaces raised from respective surfaces of the fins 58 and may have facets.

The epitaxial source/drain regions 82 and/or the fins 58 may be implanted with dopants (e.g., n-type dopant such as phosphorus, or p-type dopant such as boron, antimony) to form source/drain regions, followed by an anneal. The source/drain regions 82 may have an impurity (e.g., dopant) concentration of between about 1019 cm?3 and about 1021 cm?3. The n-type and/or p-type impurities for the source/drain regions 82 may be any of the impurities previously discussed. In some embodiments, the epitaxial source/drain regions 82 may be in situ doped during growth.

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