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FinFET device and methods of forming the same

專利號
US10868183B2
公開日期
2020-12-15
申請人
Taiwan Semiconductor Manufacturing Company, Ltd.（TW Hsinchu）
發(fā)明人
Shahaji B. More; Shih-Chieh Chang; Cheng-Han Lee
IPC分類
H01L29/78; H01L29/66; H01L29/10; H01L29/08; H01L27/092; H01L29/423; H01L21/768; H01L21/8238; H01L21/225; H01L29/161
技術(shù)領(lǐng)域
germanium,dopant,fin,in,region,finfet,layer,epitaxial,segment,silicon
地域： Hsinchu

摘要

A semiconductor device includes a substrate; a fin protruding above the substrate, the fin including a compound semiconductor material that includes a semiconductor material and a first dopant, the first dopant having a different lattice constant than the semiconductor material, where a concentration of the first dopant in the fin changes along a first direction from an upper surface of the fin toward the substrate; a gate structure over the fin; a channel region in the fin and directly under the gate structure; and source/drain regions on opposing sides of the gate structure, the source/drain regions including a second dopant, where a concentration of the second dopant at a first location within the channel region is higher than that at a second location within the channel region, where the concentration of the first dopant at the first location is lower than that at the second location.

說明書

In the illustrated embodiment, the source/drain regions 82 in the region 50C (e.g., p-type device region) has three sublayers L1, L2, and L3 with different concentrations of dopant (e.g., boron, antimony). For example, the dopant concentration in the sublayer L1 may be between about 1019 cm?3 and about 1020 cm?3, the dopant concentration in the sublayer L2 may be between about 5×1019 cm?3 and about 1021 cm?3, and the dopant concentration in the sublayer L3 may be between about 1020 cm?3 and about 2×1021 cm?3. The thickness of the layer L1 (e.g., measured along the vertical direction of FIG. 17B) may be between about 3 nm and about 15 nm, the thickness of the layer L2 may be between about 40 nm and about 60 nm, and the thickness of the layer L3 may be between about 3 nm and about 15 nm.

權(quán)利要求

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