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Semiconductor chip

專利號
US10868192B2
公開日期
2020-12-15
申請人
SOCIONEXT INC.(JP Kanagawa)
發(fā)明人
Hiroyuki Shimbo
IPC分類
H01L29/00; H01L29/786; H01L21/8238; H01L27/092; H01L27/118; H01L29/06; H01L29/775; H01L27/088; H01L29/417; H01L29/423; H01L21/8234; H01L27/02; H01L27/12
技術(shù)領(lǐng)域
nanowire,nanowires,pitch,fet,pads,in,direction,cell,fets,gate
地域: Kanagawa

摘要

Provided is a semiconductor chip including a nanowire field effect transistor (FET) and having a layout configuration effective for making manufacturing the chip easy. A semiconductor chip includes a first block including a standard cell having a nanowire FET and a second block including a nanowire FET. In the first and second blocks, nanowires extending in an X direction have an arrangement pitch in a Y direction of an integer multiple of a pitch P1. Pads have an arrangement pitch in the X direction of an integer multiple of a pitch P2.

說明書

The present disclosure provides a layout configuration of a semiconductor integrated circuit device including a nanowire FET, the layout configuration being effective for making manufacturing the device easy, and is useful for improving performance of the semiconductor integrated circuit device.

權(quán)利要求

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