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Conductive paste and conductive track or coating

專利號
US10868200B2
公開日期
2020-12-15
申請人
JOHNSON MATTHEY PUBLIC LIMITED COMPANY（GB London）
發(fā)明人
Beatriz Cela Greven; Jonathan Charles Shepley Booth; Nicholas Nowak; Simon Johnson; Tobias Droste
IPC分類
H01L31/0224; H01B1/22
技術(shù)領(lǐng)域
wt,inorganic,particle,or,μm,paste,conductive,mixture,solar,less
地域： London

摘要

The present invention relates to a conductive paste for forming a conductive track or coating on a substrate, particularly suitable for use in solar cells. The paste comprises a solids portion dispersed in an organic medium, the solids portion comprising electrically conductive material and an inorganic particle mixture wherein the inorganic particle mixture comprises substantially crystalline particles. The present invention also relates to a method of preparing a conductive paste, a method for the manufacture of a surface electrode of a solar cell, an electrode for a solar cell and a solar cell.

說明書

The skilled person is aware of suitable techniques for firing the applied conductive paste. An example firing curve is shown in FIG. 1. A typical firing process lasts approximately 30 seconds, with the surface of electrode reaching a peak temperature of about 800° C. Typically, the furnace temperature will be higher to achieve this surface temperature. The firing may for example last for 1 hour or less, 30 minutes or less, 10 minutes or less or 5 minutes or less. The firing may last at least 10 seconds. For example, the peak surface temperature of the electrode may be 1200° C. or less, 1100° C. or less, 1000° C. or less, 950° C. or less, 900° C. or less, 800° C. or less or 750° C. or less. The peak surface temperature of the electrode may be at least 500° C. or at least 600° C.

The semiconductor substrate of the electrode may be a silicon substrate. For example, it may be a single crystal semiconductor substrate, or a multi crystal semiconductor substrate. Alternative substrates include CdTe. The semiconductor may for example be a p-type semiconductor or an n-type semiconductor.

The semiconductor substrate may comprise an insulating layer on a surface thereof. Typically the conductive paste of the present invention is applied on top of the insulating layer to form the electrode. Typically, the insulating layer will be non-reflective. A suitable insulating layer is SiNx (e.g. SiN). Other suitable insulating layers include Si3N4, SiO2, Al2O3 and TiO2.

權(quán)利要求

1
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