A light emitting diode (LED) device may include an n-type layer formed on a transparent substrate. A photoluminescent (PL) in the n-type layer quantum well (QW) and an electroluminescent (EL) QW may be formed on the n-type layer. The PL QW and the EL QW may be separated from one another by a portion of the n-type layer. A p-type layer may be formed on the EL QW. Trenches may be formed extending into the n-type layer, the trenches defining an emitting area. A passivation material may be formed on sidewalls of the trenches and n-type contacts may be formed therein. A p-type contact may be formed on an upper surface of the p-type layer. A dichroic mirror may be formed on at least a lower surface of the transparent substrate.

A LED may include a substrate and a first epitaxial layer formed on the substrate. An epitaxial reflector may be formed on the first epitaxial layer. The epitaxial reflector may include multiple layers of Group III-V semiconductor materials having different compositions. A second epitaxial layer may be formed on the epitaxial reflector. An n-type layer may be formed on the second epitaxial layer. A photoluminescent PL QW may be formed in the n-type layer. An EL QW may be formed on the n-type layer. The EL QW and the PL QW may be separated from one another by a portion of the n-type layer. A p-type layer may be formed on the EL QW. A p-type electrode may be formed on an upper surface of the p-type layer. A dielectric passivation layer may be formed on the upper surface of the p-type layer, sidewalls of the p-type layer, sidewalls of the EL QW, sidewalls of the portion of the n-type layer, sidewalls of PL QW. An n-type electrode may be formed on the dielectric passivation layer and the n-type layer.