In FIG. 4D, a reflecting n-type electrode 406 may be conformally deposited on the dielectric passivation layer 404. The reflecting n-type electrode 406 may comprise any conductive material that reflects visible and/or ultraviolet light, such as, for example, a refractive metal. The reflecting n-type electrode 406 may comprise one or more of a metal such as silver, a metal stack, a sequence of transparent conducting oxide layers with different refractive indices, a series of dielectric layers with different refractive indices on top of a transparent conductive oxide layer, or combinations thereof. The reflecting n-type electrode 406 may be formed using a conventional deposition technique, such as, for example, CVD, PECVD, ALD, evaporation, sputtering, chemical solution deposition, spin-on deposition, or other like processes.

The epitaxial reflector 304 may be electrically conducting and may be placed within a distance of less than 1 micron from the reflecting p-type electrode 402 such that the epitaxial reflector 304 and reflecting p-type electrode 402 form an optical micro-cavity which contains both the PL and EL emitting QWs. The position of the EL emitting QWs within the micro-cavity may be selected to optimize the angular distribution of emitted EL radiation. The radiation distribution may be controlled such that all or at least most of the EL is emitted into angles for which the epitaxial reflector has a high reflectivity. The epitaxial reflector 304 may comprise a sequence of doped AlInN/GaN layers or a sequence of porous GaN/non-porous GaN layers.