FIG. 4D illustrates forming a reflecting n-type electrode on the dielectric passivation layer;

FIGS. 4E-4F illustrate the reflectivity of the epitaxial reflector based on wavelength and incident angle;

FIG. 5 is a chart illustrating reflectivity of the epitaxial reflector over different angles of incidence for different wavelengths of light;

FIG. 6A is a cross-section view illustrating the use of an electrochemical reaction used to improve the reflectivity of the epitaxial reflector;

FIG. 6B is a cross-section view illustrating a reaction that may selectively oxidize nitride layers of higher Al mole fraction and may convert them into oxide or oxy-nitride layers of lower refractive index than as-grown material;

FIG. 6C is a cross-section view illustrating a reaction that introduces microscopic voids (i.e., porosity) into layers that are highly doped with Si or Ge;

FIG. 7A is a cross section view illustrating forming trenches in the green LED utilizing PL of FIG. 2B to define an emitting region;

FIG. 7B is a cross section view illustrating forming a conformal dielectric passivation layer in the trenches and on the p-type layer;

FIG. 7C is a cross section view illustrating forming n-type contacts in the trenches and a p-type contact on the p-type layer;