The present application further relates to a method for manufacturing a light emitting diode chip comprising:

forming a first semiconductor layer;

forming a second semiconductor layer laminated to the first semiconductor layer;

etching the first semiconductor layer to expose at least part of the second semiconductor layer;

depositing electrodes on exposed parts of the first semiconductor layer and the second semiconductor layer; and

etching the electrodes to form a plurality of first recesses.

In an exemplary embodiment, the forming the first semiconductor layer and the second semiconductor layer laminated to each other specifically includes:

providing a substrate;

forming a buffer layer, the second semiconductor layer, an active layer and the first semiconductor layer on the substrate sequentially; and

the method for manufacturing a light emitting diode chip further includes:

etching the active layer to expose a part of the second semiconductor layer.

In an exemplary embodiment, the method for manufacturing the light emitting diode chip further includes: etching the electrodes to form a plurality of second recesses.

In an exemplary embodiment, the etching the electrodes to form a plurality of first recesses includes: patterning the electrodes by a photolithography process to form the plurality of first recesses.

In an exemplary embodiment, the etching the electrodes to form a plurality of second recesses includes: patterning the electrodes by a photolithography process to form the plurality of second recesses.