LED chips, method of manufacturing the same, and display panels
地域：
Kunshan
摘要
An LED chip provided by an embodiment includes a first semiconductor layer; an active layer and a second semiconductor layer located sequentially on the first semiconductor layer. A first contact electrode extends through the active layer and the second semiconductor layer and is electrically connected to the first semiconductor layer; a second contact electrode is located on the second semiconductor layer and is electrically connected to the second semiconductor layer; a first extension electrode is located on the first contact electrode and is electrically connected to the first contact electrode, the first extension electrode comprises a plurality of concave spots for soldering; and a second extension electrode is located on the second contact electrode, electrically connected to the second contact electrode and isolated from the first extension electrode, and the second extension electrode includes a plurality of concave spots for soldering.
說(shuō)明書(shū)
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The present application is a continuation application of International Application No. PCT/CN2018/089793, filed Jun. 4, 2018, which claims the priority to Chinese Application No. 201810187158.2 filed Mar. 7, 2018. The entireties of these applications are incorporated by reference herein for all purposes.
Exemplary embodiments of the present disclosure relate to display technologies.
Micro light emitting diode display (micro-LED display) is a new generation of display technology that uses Micro LED units as sub-pixels to realize image display. Compared with liquid crystal display (LCD) technology, the Micro-LED display panel can realize image display without using an external light source, which improves the lightness and thinness of the display panel. In addition, compared with the Organic Light-Emitting Diode (OLED), which can also be a self-luminous display, the life of the Micro-LED display panel is long, which has become a hot spot in the industry.
Referring to
權(quán)利要求
The invention claimed is:1. A light-emitting diode (LED) chip comprising:a first semiconductor layer; an active layer and a second semiconductor layer located sequentially on the first semiconductor layer; a first contact electrode extending through the active layer and the second semiconductor layer and being electrically connected to the first semiconductor layer; a second contact electrode located on the second semiconductor layer and being electrically connected to the second semiconductor layer; a first extension electrode located on the first contact electrode and being electrically connected to the first contact electrode, the first extension electrode comprising a plurality of concave spots for soldering; and a second extension electrode located on the second contact electrode, being electrically connected to the second contact electrode and being isolated from the first extension electrode, and the second extension electrode comprising a plurality of concave spots for soldering, wherein the plurality of concave spots of the first extension electrode are formed through a thickness of the first extension electrode. 2. The LED chip according to claim 1 , wherein at least a portion of the first extension electrode or the second extension electrode is used to form the plurality of concave spots. 3. The LED chip according to claim 2 , wherein each of the first extension electrode and the second extension electrode is a circular extension electrode, and an entire area of the circular extension electrode is used to form the plurality of concave spots. 4. The LED chip according to claim 3 , wherein:surfaces of the first contact electrode and the second contact electrode are flush with each other to constitute a forming surface; each of the first contact electrode and the second contact electrode is a circular contact electrode; and a projected area of the circular extension electrode on the forming surface is larger than a projected area of the circular contact electrode on the forming surface. 5. The LED chip according to claim 4 , wherein a projection of the circular extension electrode on the forming surface and a projection of the circular contact electrode on the forming surface constitute a structure with concentric circles. 6. The LED chip according to claim 2 , wherein a circular area in each of the first extension electrode and the second extension electrode is used to form the plurality of concave spots. 7. The LED chip according to claim 6 , wherein:the first contact electrode comprises a primary contact electrode, and at least one auxiliary contact electrode is isolated from the primary contact electrode; the first extension electrode comprises a primary extension electrode covering the primary contact electrode, an auxiliary extension electrode covering the auxiliary contact electrode, and a linear extension electrode connecting the primary extension electrode with the auxiliary extension electrode; and the plurality of concave spots are formed on a circular area of the primary extension electrode above the primary contact electrode. 8. The LED chip according to claim 6 , wherein:the second contact electrode comprises a primary contact electrode, and at least one extension electrode is connected to the primary contact electrode; and the second extension electrode covers the primary contact electrode and the extension electrode, and a circular area of the second extension electrode above the primary contact electrode is used to form the plurality of concave spots. 9. The LED chip according to claim 7 , wherein:surfaces of the first contact electrode and the second contact electrode are flush with each other to constitute a forming surface; the primary contact electrode is a circular contact electrode; and a projected area of the circular area on the forming surface is greater than a projected area of the circular contact electrode on the forming surface. 10. The LED chip according to claim 8 , wherein:surfaces of the first contact electrode and the second contact electrode are flush with each other to constitute a forming surface; the primary contact electrode is a circular contact electrode; and a projected area of the circular area on the forming surface is greater than a projected area of the circular contact electrode on the forming surface. 11. The LED chip according to claim 9 , wherein a projection of the circular area on the forming surface and a projection of the circular contact electrode on the forming surface form a structure with concentric circles, intersecting circles, inscribed circles or inner circulars. 12. The LED chip according to claim 10 , wherein a projection of the circular area on the forming surface and a projection of the circular contact electrode on the forming surface form a structure with concentric circles, intersecting circles, inscribed circles or inner circulars. 13. The LED chip according to claim 1 , wherein the LED chip further comprises a first insulating layer located between the first contact electrode and the second contact electrode, and flush with surfaces of the first contact electrode and the second contact electrode. 14. The LED chip according to claim 1 , further comprising a second insulating layer located between the first extension electrode and the second extension electrode for realizing the isolation between the first extension electrode and the second extension electrode, a thickness of the second insulation layer being greater than a thickness of the first extension electrode or the second extension electrode. 15. The LED chip according to claim 1 , wherein the first extension electrode or the second extension electrode is an elliptical extension electrode, a racetrack-shaped extension electrode or a polygonal extension electrode. 16. A method of manufacturing an LED chip, the method comprising:providing a substrate; forming a first semiconductor layer, an active layer, and a second semiconductor layer sequentially on the substrate; forming a first contact electrode extending through the active layer and the second semiconductor layer and electrically connected to the first semiconductor layer; forming a second contact electrode electrically connected to the second semiconductor layer on the second semiconductor layer; forming a first extension electrode electrically connected to the first contact electrode on the first contact electrode, the first extension electrode comprising a plurality of concave spots for soldering; and forming a second extension electrode electrically connected to the second contact electrode and isolated from the first extension electrode on the second contact electrode, the second extension electrode comprising a plurality of concave spots for soldering, wherein the plurality of concave spots of the first extension electrode are formed through a thickness of the first extension electrode. 17. A display panel, comprising:a driving backboard, comprising a substrate with a plurality of circuit units located thereon, the circuit units each comprising a first electrical terminal and a second electrical terminal; and a plurality of LED chips inverted on the driving backboard, wherein each of the LED chips is the LED chip according to claim 1 , the first extension electrode of the LED chip is soldered to the first electrical terminal through the concave spots, and the second extension electrode of the LED chip is soldered to the second electrical terminal through the concave spots. 18. The method according to claim 16 , wherein:surfaces of the first contact electrode and the second contact electrode are flush with each other to constitute a forming surface; and the forming the first extension electrode and the second extension electrode comprises: covering the forming surface with nanoimprint lithography resist; patterning the nanoimprint lithography resist by means of nanoimprint technology to form a nanoimprint pattern layer; forming a first conductive layer on the nanoimprint pattern layer and the forming surface among the nanoimprint pattern layer; removing the first conductive layer on the nanoimprint pattern layer, and remaining the first conductive layer on the forming surface, to constitute the first extension electrode and the second extension electrode; and removing the nanoimprint pattern layer. 19. The method according to claim 16 , wherein the forming the first contact electrode and the second contact electrode comprises:forming a first opening extending through the active layer and the second semiconductor layer and exposing the first semiconductor layer; covering a first insulating material layer on a bottom and a sidewall of the first opening, and the second semiconductor layer; patterning the first insulating material layer to expose the bottom of the first opening, and forming a second opening on the second semiconductor layer; filling the first opening and the second opening with a second conductive layer; and planarizing the second conductive layer and the first insulating material layer, the second conductive layer located in the first opening being used to constitute the first contact electrode, and the second conductive layer located in the second opening being used to constitute the second contact electrode. 20. The method according to claim 16 , further comprising: forming a second insulating layer between the first extension electrode and the second extension electrode, a thickness of the second insulation layer being greater than a thickness of the first extension electrode or the second extension electrode,wherein the forming the second insulation layer comprises: covering a second insulating material layer on the first extension electrode, the second extension electrode, and the forming surface; and patterning the second insulating material layer by a photolithography process to form the second insulating layer.
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