Referring to FIG. 2-FIG. 10, there are shown schematic diagrams illustrating respective steps of a method of manufacturing an LED chip according to an exemplary embodiment of the present disclosure. It should be noted that, in order to make the drawing concise and clear, one LED chip is taken as an example here. The method of manufacturing the LED chip includes the following processes.

As shown in FIG. 2, a substrate 100 is provided. The substrate 100 is used to provide a growth surface for a functional layer of an LED.

In this exemplary embodiment, the substrate 100 is a sapphire substrate and has a good lattice matching with a gallium nitride material. In other exemplary embodiments, the substrate may also be silicon carbide.

As shown in FIG. 3, a first semiconductor layer 101, an active layer 102, and a second semiconductor layer 102 are sequentially formed on the substrate 100. The first semiconductor layer 101, the active layer 102, and the second semiconductor layer 102 are used to form a core of a light emitting diode, as a functional layer of the LED chip.

In this exemplary embodiment, the first semiconductor layer 101 is made of N-type gallium nitride. The active layer 102 is a quantum well layer of an indium gallium nitride material. The second semiconductor layer 103 is made of P-type gallium nitride.

In the actual process, the first semiconductor layer 101, the active layer 102, and the second semiconductor layer 102 may be formed by a process of metal organic chemical vapor deposition (MOCVD).