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LED chips, method of manufacturing the same, and display panels

專利號(hào)
US10868217B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
Kunshan New Flat Panel Display Technology Center Co., Ltd.; Kunshan Go-Visionox Opto-Electronics Co., Ltd.
發(fā)明人
Dong Wei; Rubo Xing; Huimin Liu; Xiaolong Yang; Jiantai Wang
IPC分類
H01L33/38; H01L33/62; H01L23/00; G09G3/32
技術(shù)領(lǐng)域
electrode,extension,layer,contact,led,second,first,concave,spots,soldering
地域: Kunshan

摘要

An LED chip provided by an embodiment includes a first semiconductor layer; an active layer and a second semiconductor layer located sequentially on the first semiconductor layer. A first contact electrode extends through the active layer and the second semiconductor layer and is electrically connected to the first semiconductor layer; a second contact electrode is located on the second semiconductor layer and is electrically connected to the second semiconductor layer; a first extension electrode is located on the first contact electrode and is electrically connected to the first contact electrode, the first extension electrode comprises a plurality of concave spots for soldering; and a second extension electrode is located on the second contact electrode, electrically connected to the second contact electrode and isolated from the first extension electrode, and the second extension electrode includes a plurality of concave spots for soldering.

說(shuō)明書(shū)

In this exemplary embodiment, the thickness of the second insulating layer 112 is greater than the thickness of the first extension electrode 111 or the second extension electrode 121. In this way, in addition to the electrical isolation of the first extension electrode 111 and the second extension electrode 121, the second insulating layer 112 can physically isolate the solder on the different extension electrodes during the soldering process, thereby achieving electrical isolation. Specifically, the thickness of the second insulating layer 112 is in a range of 1 μm to 10 μm.

The second insulating layer 112 is made of silicon nitride, silicon oxide or the like.

It should be noted that, in other exemplary embodiments, the second insulating layer may not be disposed, and when the LED chip is soldered to the driving circuit, the solders respectively located on the first extension electrode and the second extension electrode are not connected together by precise soldering process control, thereby avoiding a short circuit between the first extension electrode and the second extension electrode.

Referring to FIG. 13, a top view of an LED chip according to another exemplary embodiment of the present disclosure is shown. The same points in this exemplary embodiment as the previous exemplary embodiment will not be described again. The difference is that a partial area of the first extension electrode in the LED chip of this exemplary embodiment is used to form a plurality of concave spots.

權(quán)利要求

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