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LED chips, method of manufacturing the same, and display panels

專利號(hào)
US10868217B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
Kunshan New Flat Panel Display Technology Center Co., Ltd.; Kunshan Go-Visionox Opto-Electronics Co., Ltd.
發(fā)明人
Dong Wei; Rubo Xing; Huimin Liu; Xiaolong Yang; Jiantai Wang
IPC分類
H01L33/38; H01L33/62; H01L23/00; G09G3/32
技術(shù)領(lǐng)域
electrode,extension,layer,contact,led,second,first,concave,spots,soldering
地域: Kunshan

摘要

An LED chip provided by an embodiment includes a first semiconductor layer; an active layer and a second semiconductor layer located sequentially on the first semiconductor layer. A first contact electrode extends through the active layer and the second semiconductor layer and is electrically connected to the first semiconductor layer; a second contact electrode is located on the second semiconductor layer and is electrically connected to the second semiconductor layer; a first extension electrode is located on the first contact electrode and is electrically connected to the first contact electrode, the first extension electrode comprises a plurality of concave spots for soldering; and a second extension electrode is located on the second contact electrode, electrically connected to the second contact electrode and isolated from the first extension electrode, and the second extension electrode includes a plurality of concave spots for soldering.

說(shuō)明書(shū)

The LED chip is an LED chip provided by the present disclosure, and the related description is not repeated herein.

In this exemplary embodiment, the first extension electrode 111 is electrically connected to the first contact electrode 106, and the first contact electrode 106 is electrically connected to the first semiconductor layer 101. Therefore, the circuit unit applies a voltage to the first semiconductor layer 101 by the first electrical terminal 21. Correspondingly, the second extension electrode 121 is electrically connected to the second contact electrode 107, and the second contact electrode 107 is electrically connected to the second semiconductor layer 103. Therefore, the circuit applies a voltage to the second semiconductor layer 103 by the second electrical terminal 22. After the voltage is applied to the first semiconductor layer 101 and the second semiconductor layer 103, the active layer 102 emits light, and light is emitted from a side close to the first semiconductor layer 101.

In this exemplary embodiment, the first semiconductor layer 101 is an N-type semiconductor layer, and the second semiconductor layer 102 is a P-type semiconductor layer. Correspondingly, the first electrical terminal 21 is a negative connection terminal, and the second electrical terminal 22 is a positive connection terminal.

權(quán)利要求

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