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Method for manufacturing chip-mounting substrate, and chip-mounting substrate

專利號(hào)
US10868221B2
公開日期
2020-12-15
申請(qǐng)人
POINT ENGINEERING CO., LTD.(KR Asan)
發(fā)明人
Bum Mo Ahn; Seung Ho Park; Tae Hwan Song
IPC分類
H01L21/48; H01L33/48; H01L23/00; H01L33/62; H01L33/60; H01L33/46; H01L23/498
技術(shù)領(lǐng)域
substrate,metal,precoat,uneven,formed,chip,coating,layer,portion,insulating
地域: Asan

摘要

A method for manufacturing a chip-mounting substrate includes a pre-coating step of forming a precoat on a substrate including a plurality of conductive portions and an insulating portion interposed between the conductive portions, an etching step of etching at least a portion of the precoat through a laser to form a pattern, and a step of forming a metal layer on the substrate. The pattern is disposed on at least one of the conductive portions, and the metal layer is formed in the pattern.

說明書

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

In the etching step, the light of a laser (not shown) is irradiated on the precoat 60 to etch at least a portion of the precoat 60, thereby forming a pattern 50 having a groove shape.

As shown in FIG. 7, the chip-mounting substrate is formed in a size far smaller than a coin. The pattern 50 is formed on the chip-mounting substrate having such a small size through the use of the laser. It is possible to accurately form a fine pattern 50 on the chip-mounting substrate. The pattern 50 is disposed at least one of the two conductive portions of the metal substrate 10 divided by the insulating portion 20.

In the present embodiment, the pattern 50 is disposed in the two conductive portions of the metal substrate 10 divided by the insulating portion 20. That is to say, the pattern 50 is disposed on both sides of the insulating portion 20. Furthermore, the pattern 50 is formed on the bottom of the cavity 40 and is disposed inside the cavity 40. Alternatively, the pattern 50 and the metal layer 30 may be disposed on only one of the two conductive portions of the metal substrate 10 divided by the insulating portion 20.

In the etching step, an uneven portion is formed by the laser on the upper surface of the metal substrate 10 in a region corresponding to the pattern 50.

權(quán)利要求

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