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Method for manufacturing chip-mounting substrate, and chip-mounting substrate

專(zhuān)利號(hào)
US10868221B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
POINT ENGINEERING CO., LTD.(KR Asan)
發(fā)明人
Bum Mo Ahn; Seung Ho Park; Tae Hwan Song
IPC分類(lèi)
H01L21/48; H01L33/48; H01L23/00; H01L33/62; H01L33/60; H01L33/46; H01L23/498
技術(shù)領(lǐng)域
substrate,metal,precoat,uneven,formed,chip,coating,layer,portion,insulating
地域: Asan

摘要

A method for manufacturing a chip-mounting substrate includes a pre-coating step of forming a precoat on a substrate including a plurality of conductive portions and an insulating portion interposed between the conductive portions, an etching step of etching at least a portion of the precoat through a laser to form a pattern, and a step of forming a metal layer on the substrate. The pattern is disposed on at least one of the conductive portions, and the metal layer is formed in the pattern.

說(shuō)明書(shū)

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

The etching step includes primary laser irradiation and a secondary laser irradiation. The pattern 50 is formed in the precoat 60 through the primary laser irradiation. Then, an uneven portion is formed by the secondary laser irradiation on the upper surface of the metal substrate 10 exposed by the primary laser irradiation. Preferably, the electric power (Watt) at the time of secondary laser irradiation is lower than the electric power at the time of primary laser irradiation. More specifically, the electric power at the time of secondary laser irradiation may be set to become ? or less of the electric power at the time of primary laser irradiation. In addition, the electric power at the time of primary laser irradiation may be set to 40% of the electric power of a laser irradiation device. The electric power at the time of secondary laser irradiation may be set to 10% of the electric power of the laser irradiation device.

By performing the laser irradiation at two levels in this way, it is possible to further enhance the accuracy of the pattern 50.

As shown in FIG. 8, the maximum depth of the groove of the uneven portion formed when the electric power of the laser irradiation device is 1.5 W is 2.36 μm and the maximum width of the groove is 13.35 μm.

As shown in FIG. 9, the maximum depth of the groove of the uneven portion formed when the electric power of the laser irradiation device is 7.5 W is 8.71 μm and the maximum width of the groove is 19.11 μm.

As shown in FIG. 10, the maximum depth of the groove of the uneven portion formed when the electric power of the laser irradiation device is 15 W is 8.85 μm and the maximum width of the groove is 25.95 μm.

權(quán)利要求

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