Organic compound, light-emitting element, light-emitting device, electronic device, and lighting device
摘要
說明書
As the electrode 102, aluminum (A1) was deposited over the electron-injection layer 119 to a thickness of 200 nm.
Next, in a glove box containing a nitrogen atmosphere, the comparative light-emitting element 3 was sealed by fixing the substrate 220 to the substrate 200 over which the organic material was deposited using a sealant for an organic EL device. Specifically, after the sealant was applied to surround the organic material over the substrate 200 and the substrate 200 was bonded to the substrate 220, irradiation with ultraviolet light having a wavelength of 365 nm at 6 J/cm2 and heat treatment at 80° C. for one hour were performed. Through the process, the comparative light-emitting element 3 was obtained.
<<Fabrication of Light-Emitting Element 4>>
A light-emitting element 4 was fabricated through the same steps as those for the comparative light-emitting element 3 except for the steps of forming the light-emitting layer 130 and the electron-transport layer 118.
As the light-emitting layer 130 over the hole-transport layer 112, 8Cz-4PCCzBfpm-02, PCCP, and GD270 (manufactured by Jilin Optical and Electronic Materials Co., Ltd.) were deposited by co-evaporation in a weight ratio of 8Cz-4PCCzBfpm-02:PCCP:GD270=0.5:0.5:0.1 to a thickness of 40 nm. Note that in the light-emitting layer 130, GD270 corresponds to the guest material that emits phosphorescence.
As the electron-transport layer 118, 8Cz-4PCCzBfpm-02 and BPhen were sequentially deposited by evaporation to thicknesses of 20 nm and 15 nm, respectively, over the light-emitting layer 130.
<<Fabrication of Light-Emitting Element 5>>
