A light-emitting element 5 was fabricated through the same steps as those for the comparative light-emitting element 3 except for the steps of forming the light-emitting layer 130 and the electron-transport layer 118.
As the light-emitting layer 130 over the hole-transport layer 112, 8Cz-4mPCCzPBfpm, PCCP, and GD270 (manufactured by Jilin Optical and Electronic Materials Co., Ltd.) were deposited by co-evaporation in a weight ratio of 8Cz-4mPCCzPBfpm:PCCP:GD270=0.5:0.5:0.1 to a thickness of 40 nm. Note that in the light-emitting layer 130, GD270 corresponds to the guest material that emits phosphorescence.
As the electron-transport layer 118, 8Cz-4mPCCzPBfpm and BPhen were sequentially deposited by evaporation to thicknesses of 20 nm and 15 nm, respectively, over the light-emitting layer 130.
<Characteristics of Light-Emitting Elements>
The current efficiency-luminance characteristics of the fabricated comparative light-emitting element 3 and the fabricated light-emitting elements 4 and 5 are shown in