In the case where carriers are recombined in the light-emitting layer 130 and the singlet excited state and the triplet excited state of the host material 132 are formed, energy of the singlet excited state transfers from the S1 level (SH) of the host material 132 to the S1 level (SA) of the material 131, and energy of the triplet excited state transfers from the T1 level (TH) of the host material 132 to the T1 level (TA) of the material 131; thus, the singlet excited state and the triplet excited state of the material 131 are formed.
Alternatively, carriers are recombined in the material 131, and the singlet excited state having excitation energy that corresponds to the S1 level (SA) and the triplet excited state having excitation energy that corresponds to the T1 level (TA) are formed.
In either case, the singlet excited state and the triplet excited state of the material 131 are formed by the carrier recombination.
In the light-emitting element 150 of one embodiment of the present invention, the S1 level (SA) and the T1 level (TA) of the material 131 included in the light-emitting layer 130 are energy levels adjacent to each other.