Organic compound, light-emitting element, light-emitting device, electronic device, and lighting device
摘要
說明書
Between the electron-transport layer 118 and the light-emitting layer 130, a layer that controls transfer of electron carriers may be provided. The layer that controls transfer of electron carriers is a layer formed by addition of a small amount of a substance having a high electron-trapping property to a material having a high electron-transport property described above, and the layer is capable of adjusting carrier balance by suppressing transfer of electron carriers. Such a structure is very effective in preventing a problem (such as a reduction in element lifetime) caused when electrons pass through the light-emitting layer.
An n-type compound semiconductor may also be used, and an oxide such as titanium oxide (TiO2), zinc oxide (ZnO), silicon oxide (SiO2), tin oxide (SnO2), tungsten oxide (WO3), tantalum oxide (Ta2O3), barium titanate (BaTiO3), barium zirconate (BaZrO3), zirconium oxide (ZrO2), hafnium oxide (HfO2), aluminum oxide (Al2O3), yttrium oxide (Y2O3), or zirconium silicate (ZrSiO4); a nitride such as silicon nitride (Si3N4); cadmium sulfide (CdS); zinc selenide (ZnSe); or zinc sulfide (ZnS) can be used, for example.
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