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Manufacturing method of organic light-emitting display and mask assembly

專利號
US10868268B2
公開日期
2020-12-15
申請人
SAMSUNG DISPLAY CO., LTD.(KR Yongin-si)
發(fā)明人
Hoon Kim; Keehyun Nam; Junwoo Kim; Hyesuk An; Gyunghyun Ko
IPC分類
H01L51/50; H01L27/12; H01L21/02; H01L51/52
技術(shù)領(lǐng)域
mask,may,layer,pixel,portion,deposition,display,protruding,area,be
地域: Yongin-si

摘要

A method of manufacturing a display device includes preparing a pixel circuit substrate including thin-film transistors and pixel electrodes respectively electrically connected to the thin-film transistors, forming a first deposition layer on the pixel circuit substrate using a first mask assembly, and forming a second deposition layer on the pixel circuit substrate using a second mask assembly. At least one of the first mask assembly and the second mask assembly includes a mask plate including an opening portion through which a deposition material passes and a covering portion that blocks a passage of the deposition material. The mask plate includes a protruding portion that protrudes from an edge of the covering portion toward a center region of the opening portion.

說明書

The protruding portion 133 may have various shapes. For example, as shown in FIGS. 3, 4A, and 4B, the protruding portion 133 may be substantially circular. In some implementations, the protruding portion 133 may have a semi-elliptical shape, as shown in FIG. 4D. In some implementations, the protruding portion 133 may have a rectangular shape with rounded corners or may have a polygonal or irregular shape.

FIG. 5 illustrates a cross-sectional view of a first manufacturing device 1000 that may be used in a manufacturing process of a display device according to an embodiment.

Referring to FIG. 5, the first manufacturing device 1000 may include a chamber 1110, a first supporting portion 1120, a second supporting portion 1130, a source portion 1140, a magnetic force portion 1160, a vision portion 1170, and a pressure regulator 1180.

The chamber 1110 may include a space therein. One side of the chamber 1110 may be opened and a gate valve 1110-1 may be installed in the open area. The one side of the chamber 1110 may be opened or closed by an operation of the gate valve 1110-1.

The pixel circuit substrate D may be on the first supporting portion 1120. The pixel circuit substrate D shown in FIG. 5 may be a substrate including the thin-film transistor TFT on the substrate 11 and the pixel electrode 21 connected to the thin-film transistor TFT as described above with reference to FIG. 2.

權(quán)利要求

1
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