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Biasing circuits for voltage controlled or output circuits

專利號
US10868507B2
公開日期
2020-12-15
申請人
Ronald Quan
發(fā)明人
Ronald Quan
IPC分類
H03G1/00; H03F3/45; H03F1/02; H03G3/30
技術(shù)領(lǐng)域
voltage,fet,q1b,amplifier,vds,drain,q1a,or,rfb,r7
地域: CA CA Cupertino

摘要

A number of biasing circuits for amplifiers including voltage controlled amplifier is presented. Also a number of field effect transistor circuits include voltage controlled attenuators or voltage controlled processing circuits. Example circuits include modulators, lower distortion variable voltage controlled resistors, sine wave to triangle wave converters, and or servo controlled biasing circuits.

說明書

FIG. 12 shows a voltage controlled phase shifting circuit via U1B with linearized drain to source Q2B FET resistance (e.g., via feedback network Rfb and R16). A buffer amplifier U1A is included to avoid or to prohibit leaking the phase modulation or phase shifting signal (e.g., Vphase_mod may include an AC and or DC signal(s)) into the output terminal Vout. The phase shift is related to the time constant of C14×RdsQ2B∥R19, where RdsQ2B is the drain to source resistance of FET Q2B, and where RdsQ2B∥R19=[(RdsQ2B×R19)/(RdsQ2B+R19)]. In this example of FIG. 11, the phase shift=180 degrees?2 arctan(f/fc). Where f=frequency from the Vin signal source, and fc=1/[2π(C14×RdsQ2B∥R19)]. In some circuits R19 may be omitted such that R19=infinite ohms. Although Q2B in FIG. 12 is shown as a JFET or depletion mode FET, Q2B may include an enhancement mode FET or MOSFET as shown in FIG. 13.

權(quán)利要求

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