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Biasing circuits for voltage controlled or output circuits

專利號(hào)
US10868507B2
公開日期
2020-12-15
申請(qǐng)人
Ronald Quan
發(fā)明人
Ronald Quan
IPC分類
H03G1/00; H03F3/45; H03F1/02; H03G3/30
技術(shù)領(lǐng)域
voltage,fet,q1b,amplifier,vds,drain,q1a,or,rfb,r7
地域: CA CA Cupertino

摘要

A number of biasing circuits for amplifiers including voltage controlled amplifier is presented. Also a number of field effect transistor circuits include voltage controlled attenuators or voltage controlled processing circuits. Example circuits include modulators, lower distortion variable voltage controlled resistors, sine wave to triangle wave converters, and or servo controlled biasing circuits.

說明書

FIG. 18 shows another embodiment with further improvement wherein the FET circuits include feedback linearization (e.g., reduction of distortion) from the drain to source resistances of Q1A and Q1B via amplifiers and feedback networks. A first FET (e.g., Q1A) is supplied with an in-phase input signal Vin; a second FET (e.g., Q1B) is supplied with an out of phase (e.g., inverted phase) input signal via the output of U1B. Each FET includes a distortion reduction circuit via U1A, Rfb1, and Ra1 for Q1A, and a distortion reduction circuit via U2A, Rfb2, and Rb1 for Q1B. The signals from the drains of Q1A and Q1B are coupled via U1A and U2A to a differential amplifier U2B to further subtract or cancel even order distortion. The output signal is coupled to an output terminal of U2B. A bias voltage to the FET is provided by VR1, which is a negative voltage for N channel depletion mode FETs or N channel JFETs. Preferably Q1A and Q1B are matched.

權(quán)利要求

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