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Biasing circuits for voltage controlled or output circuits

專利號(hào)
US10868507B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
Ronald Quan
發(fā)明人
Ronald Quan
IPC分類
H03G1/00; H03F3/45; H03F1/02; H03G3/30
技術(shù)領(lǐng)域
voltage,fet,q1b,amplifier,vds,drain,q1a,or,rfb,r7
地域： CA CA Cupertino

摘要

A number of biasing circuits for amplifiers including voltage controlled amplifier is presented. Also a number of field effect transistor circuits include voltage controlled attenuators or voltage controlled processing circuits. Example circuits include modulators, lower distortion variable voltage controlled resistors, sine wave to triangle wave converters, and or servo controlled biasing circuits.

說(shuō)明書(shū)

If Q1a and Q1B are N channel enhancement mode or N channel MOSFETs, then the bias voltage Vbias will include a positive voltage as shown in FIG. 19. FIG. 19 shows an example circuit using enhancement mode devices (FETs) that perform essentially the same functions as the circuit in FIG. 18. Note in FIG. 19 that the isolation amplifiers or buffer amplifiers U1A coupled to Rfb1 to the gate of FET Q1A′; and U2A coupled to Rfb2 to the gate of FET Q1B′ provides lower distortion characteristics than if the feedback resistors Rfb1 were connected across the drain and gate of Q1A′ and Rfb2 were connected across the drain and gate of Q1B′. Preferably Q1A′ and Q1B′ are matched.

權(quán)利要求

1
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