白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Method for manufacturing resonance apparatus

專利號(hào)
US10868514B2
公開日期
2020-12-15
申請(qǐng)人
SAMSUNG ELECTRONICS CO., LTD.(KR Suwon-si)
發(fā)明人
Hosoo Park; Duck Hwan Kim; Chul Soo Kim; Sang Uk Son; In Sang Song; Jeashik Shin; Moonchul Lee
IPC分類
H04R17/00; H03H9/54; H01L41/047; H01L41/29; H03H9/02; H03H9/13; H03H9/17
技術(shù)領(lǐng)域
electrode,layer,conductive,upper,resonance,reflective,depositing,loss,formed,vapor
地域: Suwon-si

摘要

A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

說明書

The connection units 202 and 203 may connect the resonance apparatus to an external device, using an upper electrode and a lower electrode. For example, the external device may include a transmission device that transmits a signal and a receiving device that receives the signal transmitted from the transmission device. The upper electrode may be included in both the resonance unit 201 and the connection unit 202. The lower electrode may be included in both the resonance unit 201 and the connection unit 203.

In more detail, the resonance apparatus includes a conductive layer formed by vapor depositing a conductive material adjacent to the resonance unit 201. Accordingly, the conductive layer is disposed adjacent to the resonance unit 201. The conductive layer may reduce an electrode resistance generated by the connection units 202 and 203 without affecting an acoustic wave generated by the resonance unit 201.

For example, the resonance apparatus may include a first conductive layer formed by vapor depositing the conductive material 204 as close as possible to the resonance unit 201, namely, the upper electrode of the resonance unit 201. In more detail, the conductive material 204 may be vapor deposited in a region corresponding to an interface between the resonance unit 201 and the connection unit 202, within an entire region of the connection unit 202. That is, the conductive material 204 may not be vapor deposited within a region of the resonance unit 201.

權(quán)利要求

1
微信群二維碼
意見反饋