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Method for manufacturing resonance apparatus

專利號
US10868514B2
公開日期
2020-12-15
申請人
SAMSUNG ELECTRONICS CO., LTD.（KR Suwon-si）
發(fā)明人
Hosoo Park; Duck Hwan Kim; Chul Soo Kim; Sang Uk Son; In Sang Song; Jeashik Shin; Moonchul Lee
IPC分類
H04R17/00; H03H9/54; H01L41/047; H01L41/29; H03H9/02; H03H9/13; H03H9/17
技術(shù)領(lǐng)域
electrode,layer,conductive,upper,resonance,reflective,depositing,loss,formed,vapor
地域： Suwon-si

摘要

A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

說明書

In operation 1205, a conductive layer is formed on the upper electrode and/or the lower electrode.

In operation 1206, a loss compensation layer is formed on the upper electrode.

In operation 1207, a loss compensation conductive layer is formed on the loss compensation layer.

FIG. 13 is a flowchart illustrating still another method of manufacturing a resonance apparatus. The resonance apparatus includes a structure and a Bragg reflector structure.

That is, the method of manufacturing the resonance apparatus includes forming the Bragg reflector structure in addition to the operations of the method of manufacturing the resonance apparatus of FIG. 11. Therefore, the same operations as in the method of manufacturing the resonance apparatus of FIG. 11 will not be described in detail with reference to FIG. 13 for conciseness.

權(quán)利要求

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