Referring to FIG. 13, in operation 1301, a reflective layer is formed on an upper portion of a substrate. The reflective layer reflects an acoustic wave converted by a piezoelectric layer. The reflective layer may include a thickness corresponding to a wavelength of a resonance frequency of the resonance apparatus. The reflective layer may include a first reflective layer and a second reflective layer. For example, the second reflective layer may be formed by vapor depositing Mo, Ru, W, and/or Pt, on the upper portion of the substrate. In addition, the first reflective layer may be formed by vapor depositing a SiO-based material, a SiN-based material, an AlO-based material, and an AlN-based material, on an upper portion of the second reflective layer. Accordingly, the first reflective layer may include a relatively lower acoustic impedance than the second reflective layer.
In operation 1302, a lower electrode is formed on an upper portion of the reflective layer.
In operation 1303, a piezoelectric layer is formed on an upper portion of the lower electrode.
In operation 1304, an upper electrode is formed on an upper portion of the piezoelectric layer.
In operation 1305, a conductive layer is formed on the upper electrode and/or the lower electrode.
In operation 1306, a loss compensation layer is formed on the upper electrode.
In operation 1307, a loss compensation conductive layer is formed on the loss compensation layer.
