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Method for manufacturing resonance apparatus

專利號
US10868514B2
公開日期
2020-12-15
申請人
SAMSUNG ELECTRONICS CO., LTD.(KR Suwon-si)
發(fā)明人
Hosoo Park; Duck Hwan Kim; Chul Soo Kim; Sang Uk Son; In Sang Song; Jeashik Shin; Moonchul Lee
IPC分類
H04R17/00; H03H9/54; H01L41/047; H01L41/29; H03H9/02; H03H9/13; H03H9/17
技術(shù)領(lǐng)域
electrode,layer,conductive,upper,resonance,reflective,depositing,loss,formed,vapor
地域: Suwon-si

摘要

A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

說明書

In more detail, the conductive layers 106 and 107 may be formed by vapor depositing the conductive material adjacent to a resonance unit corresponding to a portion of the upper electrode 105 and/or the lower electrode 102. For example, the conductive layers 106 and 107 may be formed by vapor depositing the conductive material at an interface between the resonance unit and a connection unit corresponding to a remaining portion of the upper electrode 105 and/or the lower electrode 102, such that the conductive material is formed as close as possible to the resonance unit. The vapor depositing of the conductive material at the interface between the resonance unit and the connection unit will be described with reference to FIG. 2.

In another example, the conductive layer 106 may be formed by vapor depositing the conductive material on the upper portion or the lower portion of the lower electrode 102. In more detail, the conductive layer 106 may be formed by vapor depositing the conductive material on the lower portion of the lower electrode 102 that corresponds to the upper portion of the substrate 101, as shown in FIG. 1. Alternatively, the conductive layer 106 may be formed by vapor depositing the conductive material on the upper portion of the lower electrode 102 that corresponds to a lower portion of the piezoelectric layer 104.

權(quán)利要求

1
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