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Method for manufacturing resonance apparatus

專利號(hào)
US10868514B2
公開日期
2020-12-15
申請(qǐng)人
SAMSUNG ELECTRONICS CO., LTD.(KR Suwon-si)
發(fā)明人
Hosoo Park; Duck Hwan Kim; Chul Soo Kim; Sang Uk Son; In Sang Song; Jeashik Shin; Moonchul Lee
IPC分類
H04R17/00; H03H9/54; H01L41/047; H01L41/29; H03H9/02; H03H9/13; H03H9/17
技術(shù)領(lǐng)域
electrode,layer,conductive,upper,resonance,reflective,depositing,loss,formed,vapor
地域: Suwon-si

摘要

A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

說明書

In this example, the conductive layer 107 may be formed by vapor depositing the conductive material on the upper portion or a lower portion of the upper electrode 105. In more detail, the conductive layer 107 may be formed by vapor depositing the conductive material on the lower portion of the upper electrode 105 that corresponds to the upper portion of the piezoelectric layer 104.

In still another example, the conductive layer 106 may be formed at the upper electrode 105, whereas the conductive layer 107 is formed at the lower electrode 102.

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