FIG. 2 is a cutaway view of the laser chip shown by FIG. 1, where the single active mesa structure 1 shown by FIG. 1 is numbered as 11 in FIG. 2 and where the masked implant areas 2 shown by FIG. 1 are numbered as 12 in FIG. 2. FIG. 2 represents the chip after implant, and etch but no top metal. Etched region 13 isolates the single mesa structure 12 from the “frame” or N mesa 14 (where the single ground structure 4 from FIG. 1 is shown as the frame/N mesa 14 in FIG. 2). FIG. 2 shows:
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        - 11 Implanted area of Single Active Mesa Structure isolating multiple lasing points
- 12 Areas of the Epitaxy Masked from Implant which will produce lasing
- 13 Etched isolation trench separating the Single Active Mesa Structure 11 and the Single Ground Structure 14
- 14 Single Ground Structure
- 15 Quantum wells between the top P mirror and the bottom N mirror—this is an active region where Photons are emitted
- 16 N mirror which has N contact layer or highly doped layers for N metal electrical contact location
- 17 Laser substrate