Method and apparatus for alignment of a line-of-sight communications link
地域：
NM
NM Albuquerque
摘要
Techniques are disclosed for aligning an optical transmitter with an optical receiver for a line-of-sight communications link, wherein the optical transmitter comprises a laser array emitter, the laser array emitter comprising a plurality of laser emitting regions, wherein each of a plurality of the laser emitting regions is configured to emit laser light in a different direction such that the laser array emitter is capable of emitting laser light in a plurality of different directions. The system can run produce emissions from different laser emitting regions until a laser emitting region that is in alignment with the optical receiver is found. This aligned laser emitting region can then be selected for use to optically communicate data from the optical transmitter to the optical receiver.
說明書
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
An example embodiment of the process steps to create the single structure for embodiments 1 and 2 with implant current confinement can be as follows.
-
- Step 1. Use photolithography to mask areas which will not have P Metal deposited.
- Step 2. Deposit P Metal (typically TiPtAu ?2000 A)
- Step 3. Photolithography lift off and wafer cleaning. O2 descum or ash all organics off wafer.
- Step 4. Dielectric deposit (typically SiNx ?<1000 A) used as an etch mask
- Step 5. Photolithographic masking using either photoresist or metal deposited in areas to protect the epi material from being damaged from the implant which makes the unprotected regions non-conductive through ion bombardment. This step can be performed later in the process but may be more difficult due to more varied topology.
- Step 6. Implant—Those skilled in the art of calculating the implant doses will determine the dose and species of implant needed to disrupt the materials structures to the depth which will isolate the p regions and the quantum wells from each other
- Step 7 Cleaning this photolithography is difficult due to the implant and a deposition of metal over the photolithography such as plating could help to make it easier to clean off the resist.
意見反饋
使用該功能遇到問題