白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Method and apparatus for alignment of a line-of-sight communications link

專利號(hào)
US10868616B2
公開日期
2020-12-15
申請(qǐng)人
OptiPulse Inc.(US NM Albuquerque)
發(fā)明人
John Richard Joseph
IPC分類
H04B10/112; H04B10/073; H04B10/116; H04B10/50
技術(shù)領(lǐng)域
laser,mesa,waveguide,optical,gsg,lasing,array,structure,contact,emitting
地域: NM NM Albuquerque

摘要

Techniques are disclosed for aligning an optical transmitter with an optical receiver for a line-of-sight communications link, wherein the optical transmitter comprises a laser array emitter, the laser array emitter comprising a plurality of laser emitting regions, wherein each of a plurality of the laser emitting regions is configured to emit laser light in a different direction such that the laser array emitter is capable of emitting laser light in a plurality of different directions. The system can run produce emissions from different laser emitting regions until a laser emitting region that is in alignment with the optical receiver is found. This aligned laser emitting region can then be selected for use to optically communicate data from the optical transmitter to the optical receiver.

說明書

  • Step 18. Clean off mask. O2 descum or ash all organics off wafer.
  • Step 19. Use photolithography to mask areas which will not have Plated Metal deposited.
  • Step 20. Plate areas with ?4-5 um of Metal (typically Au) or Cu if diffusion barrier can be deposited first.
  • Step 21. Use photolithography to mask areas which will not have Solder deposited.
  • Step 22. Deposit Solder Metal (Typically AuSn/Au eutectic composition of 80% Au/20% Sn by atomic weight. Total thickness of AuSn layer ?40000 A (4 microns) or more with ?500 A Au on top to stop any oxidation of Sn. This layer can be patterned and deposited on the submount with electrical waveguide which is bonded to the laser grid.
  • Embodiment 3 for US Pat App Pub 2017/0033535—Top-Emitting Oxidation

    In a third embodiment, oxidation rather than ion implantation is used to create the grid of top-emitting lasing regions within the single structure. For example, a patterned etch can isolate conductive paths in a single structure, creating a grid of light sources. This structure exhibits multiple laser emission points from the single structure. The lasing structure is isolated with an etched region from the ground contact that forms the outside perimeter of the chip. This structure for Embodiment 3 is top emitting. The conductive areas of the grid are where light will be emitted. The positive electrical contact can be a grid with openings where the light is emitted.

    權(quán)利要求

    1
    微信群二維碼
    意見反饋