白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Method and apparatus for alignment of a line-of-sight communications link

專利號(hào)
US10868616B2
公開日期
2020-12-15
申請(qǐng)人
OptiPulse Inc.(US NM Albuquerque)
發(fā)明人
John Richard Joseph
IPC分類
H04B10/112; H04B10/073; H04B10/116; H04B10/50
技術(shù)領(lǐng)域
laser,mesa,waveguide,optical,gsg,lasing,array,structure,contact,emitting
地域: NM NM Albuquerque

摘要

Techniques are disclosed for aligning an optical transmitter with an optical receiver for a line-of-sight communications link, wherein the optical transmitter comprises a laser array emitter, the laser array emitter comprising a plurality of laser emitting regions, wherein each of a plurality of the laser emitting regions is configured to emit laser light in a different direction such that the laser array emitter is capable of emitting laser light in a plurality of different directions. The system can run produce emissions from different laser emitting regions until a laser emitting region that is in alignment with the optical receiver is found. This aligned laser emitting region can then be selected for use to optically communicate data from the optical transmitter to the optical receiver.

說明書

Current confinement is a major part of a semiconductor laser. The concept is to force the current flow away from the edges of the structure so there is not an issue with current flowing near rough surface states that may exist from the etch. The current flow is also ideally concentrated to create lasing by increasing the current density in the material The current confinement occurs either by oxidation through allowing the high concentrate layers of Al to get exposed by hot damp conditions in the oxidation process enabled by the drilled holes (e.g., this Embodiment 3), or by the implant to render all other areas nonconductive (e.g., see Embodiments 1 and 2).

FIG. 7A shows:

    • 701 Electrical Waveguide Substrate
    • 702 Etched region isolating large single mesa from Ground Frame
    • 703 N Metal contact electrically contacting N contact layer
    • 704 N Mirror
    • 705 N Contact layer in N mirror (low resistance for ohmic contact)
    • 706 N Mirror above N contact region
    • 707 Active region (quantum wells)
    • 708 Oxidized Layer Closing off Current in these Regions
    • 709 P mirror
    • 710 Dielectric Layer
    • 711 Plating on top of P contact Metal
    • 712 Aperture in P Contact Metal and Plating Metal for laser beam exit

權(quán)利要求

1
微信群二維碼
意見反饋