761 Current Confinement Aperture formed by opening in Oxidation Layer
        762 Oxidation Layer Dielectric
        763 Laser Beam Propagating through Metal Opening
    
    
FIG. 7C is a cross sectional view of the area where the P Contact or Signal of the GSG waveguide is positioned below the Laser Chip where the N Contact Frame or single structure mesa grounded to the N contact of the laser is above the GSG Electrical Waveguide. The large gap between the Laser Ground and the P Signal Pad reduces the capacitance of the circuit enabling higher frequency operation. FIG. 7C depicts:
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        - 780 Dielectric Layer
- 781 N Type Ohmic Contact Metal
- 782 Plating Shorting N Metal Contact to Single Ground Mesa Structure
- 784 N Contact Layer in Epitaxial Growth
- 785 Plating Electrically Contacted to Signal Pad on Electrical Waveguide
- 786 Metal Signal Pad Lead on GSG Electrical Waveguide
- 787 Plating on Ground Pad of GSG Electrical Waveguide
- 788 Electrical Waveguide Substrate
- 789 Gap between Conductive Signal Pad Structure and N Contact Layer Reduces Capacitance
 
Process for Embodiment 3 of US Pat App Pub 2017/0033535