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Method and apparatus for alignment of a line-of-sight communications link

專利號(hào)
US10868616B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
OptiPulse Inc.（US NM Albuquerque）
發(fā)明人
John Richard Joseph
IPC分類
H04B10/112; H04B10/073; H04B10/116; H04B10/50
技術(shù)領(lǐng)域
laser,mesa,waveguide,optical,gsg,lasing,array,structure,contact,emitting
地域： NM NM Albuquerque

摘要

Techniques are disclosed for aligning an optical transmitter with an optical receiver for a line-of-sight communications link, wherein the optical transmitter comprises a laser array emitter, the laser array emitter comprising a plurality of laser emitting regions, wherein each of a plurality of the laser emitting regions is configured to emit laser light in a different direction such that the laser array emitter is capable of emitting laser light in a plurality of different directions. The system can run produce emissions from different laser emitting regions until a laser emitting region that is in alignment with the optical receiver is found. This aligned laser emitting region can then be selected for use to optically communicate data from the optical transmitter to the optical receiver.

說(shuō)明書(shū)

  • 81 GaAs substrate
  • 82 Possible position for low resistance contact layer
  • 83 N Mirror layer after contact region
  • 84 Low resistance N contact region
  • 85 N Mirror layer after quantum wells
  • 86 Quantum Well Region
  • 87 Oxidation layers
  • 88 P Mirror
  • 89 Low resistance P Contact layer

    • FIG. 9 is an illustration of the first process performed, which is P metal deposit. This is typically a Ti/Pt/Au Layer on top of the highly P doped Contact Layer forming an ohmic contact. FIG. 9 shows:

      • 91 P Metal forming Ohmic Contact after annealing process
      • 92 Low Resistance P Contact Layer

    FIG. 10 is a top view of the etch of the epitaxial layer down to the N contact layer. FIG. 10 shows:

      • 1001 Etched Area to N Contact Layer
      • 1002 Single Mesa Ground Structure
      • 1003 Single Mesa Active Structure

    權(quán)利要求

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