In some embodiments, the transmit/receive switch can further include a first shunt path between the first throw and an AC ground, and a second shunt path between the second throw and the AC ground. Each of the first and second shunt paths can include a plurality of FETs arranged in series and configured to be turned ON when the corresponding series path is OFF, and to be turned OFF when the series path is ON. Each FET of the first and second series paths and the first and second shunt paths can be implemented as a MOSFET device having a multi-gate configuration.

In some implementations, the present disclosure relates to a method for fabricating a semiconductor die. The method includes forming or providing a semiconductor substrate, and implementing a power amplifier on the semiconductor substrate. The power amplifier is configured for wireless local area network (WLAN) transmit operation associated with a frequency range. The method further includes forming a low-noise amplifier (LNA) on the semiconductor substrate. The LNA is configured for WLAN receive operation associated with the frequency range. The method further includes implementing a transmit/receive switch on the semiconductor substrate. The transmit/receive switch is configured to facilitate the transmit and receive operations.