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Display device

專利號
US11140790B2
公開日期
2021-10-05
申請人
Samsung Display Co., Ltd.（KR Gyeonggi-Do）
發(fā)明人
Taewoong Kim; Hyunwoo Koo; Hyungsik Kim; Jeongho Kim; Jinhwan Choi
IPC分類
H05K5/00; H05K5/02; H05K5/03; H01L51/52; H04B1/3877; H01L27/32
技術(shù)領(lǐng)域
ju,du3,may,guide,joint,cvp1,display,portion,du2,first
地域： Yongin-Si

摘要

A display device includes a first guide member extending in a first direction, a second guide member extending in the first direction and facing the first guide member in a second direction crossing the first direction, a display panel disposed between the first guide member and the second guide member, a support member which supports a portion of the display panel, a first driving unit which moves the support member, and a second driving unit connected to one end of the display panel to roll or unroll the display panel. Both sides of the support member are inserted into guide grooves defined in an inner side surface of the first guide member and an inner side surface of the second guide member, which faces the inner side surface of the first guide member, and the support member moves along the guide grooves.

說明書

The first input electrode DE1 and the first output electrode SE1 may be disposed on the second insulating layer 20. The first input electrode DE1 and the first output electrode SE1 may be connected to the first area and the second area of the first oxide semiconductor pattern OSP1 through the first contact hole CH1 and the second contact hole CH2, respectively.

A third insulating layer 30 may be disposed on the second insulating layer 20 to cover the first input electrode DE1 and the first output electrode SE1. The third insulating layer 30 may provide a flat upper surface on layers therebelow. The third insulating layer 30 may include an organic material and/or an inorganic material.

FIG. 9 shows the structure of the second transistor T2 and the structure of the sixth transistor T6, which have substantially the same structure as each other. The second transistor T2 may include a second input electrode DE2, a second output electrode SE2, a second control electrode GE2 and a second oxide semiconductor pattern OSP2, and the sixth transistor T6 may include a sixth input electrode DE6, a sixth output electrode SE6, a sixth control electrode GE6 and a sixth oxide semiconductor pattern OSP6. The sixth input electrode DE6 of the sixth transistor T6 may be connected to the second output electrode SE2 of the second transistor T2 on the second insulating layer 20.

權(quán)利要求

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