Since the capacitance C2 formed by the touch electrode TE is significantly larger than the capacitance C1 formed by the data line DL, the capacitance C1 formed by the data line DL has substantially no effect on the capacitance C2 formed by the touch electrode TE.

As a result, the capacitance C1 formed by the data line DL has no direct effect on the touch line TL or no indirect effect on the touch line TL through the touch electrode TE. Accordingly, the capacitance C1 formed by the data line DL may be prevented from acting as crosstalk in the touch sensing signal.

The shield line connected to the shield pattern SP may be not only the touch electrode TE, but also a backlight shield pattern BLSP provided on a peripheral area of the pixel, a gate electrode of a thin-film transistor (TFT) of the display panel 110, or an independent shield electrode provided in any space of the display panel 110.

As described above, the application of the shield signal to the shield pattern SP through the shield line may reduce the capacitance between the shield pattern SP and the shield lines connected thereto or reduce the effect of the data voltage transferred through the data line DL.

FIG. 5 is a cross-sectional view illustrating a structure including a shield pattern in the touch display device according to embodiments.

Referring to FIG. 5 in the touch display device 100 according to embodiments, a gate electrode GATE and a backlight shield pattern BLSP are provided on a substrate 101.