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Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness

專利號(hào)
US11176345B2
公開日期
2021-11-16
申請(qǐng)人
InvenSense, Inc.(US CA San Jose)
發(fā)明人
Quy Chau; Mei-Lin Chan
IPC分類
G06K9/00
技術(shù)領(lǐng)域
ultrasonic,pmut,layer,sensor,in,image,contact,tof,acoustic,be
地域: CA CA San Jose

摘要

An ultrasonic sensor includes a two-dimensional array of ultrasonic transducers, wherein the two-dimensional array of ultrasonic transducers is substantially flat, a contact layer having a non-uniform thickness overlying the two-dimensional array of ultrasonic transducers, and an array controller configured to control activation of ultrasonic transducers during an imaging operation. During the imaging operation, the array controller is configured to control a transmission frequency of activated ultrasonic transducers during the imaging operation, wherein a plurality of transmission frequencies are used during the imaging operation to account for an impact of an interference pattern caused by the non-uniform thickness of the contact layer, and is configured to capture at least one fingerprint image using the plurality of transmission frequencies.

說明書

In one embodiment, both edge support 102 and interior support 104 are attached to a substrate 140. In various embodiments, substrate 140 may include at least one of, and without limitation, silicon or silicon nitride. It should be appreciated that substrate 140 may include electrical wirings and connection, such as aluminum or copper. In one embodiment, substrate 140 includes a CMOS logic wafer bonded to edge support 102 and interior support 104. In one embodiment, the membrane 120 comprises multiple layers. In an example embodiment, the membrane 120 includes lower electrode 106, piezoelectric layer 110, and upper electrode 108, where lower electrode 106 and upper electrode 108 are coupled to opposing sides of piezoelectric layer 110. As shown, lower electrode 106 is coupled to a lower surface of piezoelectric layer 110 and upper electrode 108 is coupled to an upper surface of piezoelectric layer 110. It should be appreciated that, in various embodiments, PMUT device 100 is a microelectromechanical (MEMS) device.

權(quán)利要求

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