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Electrode arrangement, contact assembly for an electrode arrangement, charged particle beam device, and method of reducing an electrical field strength in an electrode arrangement

專利號
US11177114B1
公開日期
2021-11-16
申請人
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH(DE Heimstetten)
發(fā)明人
Matthias Firnkes; Florian Lampersberger; Carlo Salvesen
IPC分類
H01J37/00; H01J37/317; H01J37/09; H01J37/244; H01J37/12
技術(shù)領(lǐng)域
electrode,first,spacer,element,shield,contact,blind,conductive,beam,second
地域: Heimstetten

摘要

An electrode arrangement for acting on a charged particle beam in a charged particle beam apparatus is described. The electrode arrangement includes a first electrode with a first opening for the charged particle beam; a first spacer element positioned in a first recess provided in the first electrode on a first electrode side for aligning the first electrode relative to a second electrode, the first spacer element having a first blind hole; a first conductive shield provided in the first blind hole; and a contact assembly protruding from the first electrode into the first blind hole for ensuring an electrical contact between the first electrode and the first conductive shield. Further, a contact assembly for such an electrode arrangement, a charged particle beam device with such an electrode arrangement, as well as a method of reducing an electrical field strength in an electrode arrangement are described.

說明書

In some embodiments, the first conductive shield 150 may conform in shape with and/or lie in close contact to an inner wall of the first blind hole 141. In particular, the first conductive shield 150 may cover a major part of or the whole inner wall surface of the first blind hole. The first conductive shield 150 may lie close to the inner wall of the first blind hole 141, such that no spaces or gaps are provided between the inner wall of the first blind hole 141 and the first conductive shield 150. Spaces between the first conductive shield and the inner wall of the first blind hole may potentially generate new triple points, i.e. new junctions of metal, dielectric and vacuum, and hence new positions of potential field enhancements, such that such spaces are beneficially reduced or avoided.

In some embodiments, which can be combined with other embodiments described herein, the first conductive shield 150 may cover 80% or more, particularly 90% or more of the inner wall surface of the first blind hole 141. Specifically, essentially the entire inner wall surface of the first blind hole 141 may be covered by the first conductive shield 150. This reduces the risk of generating new triple points at positions inside the first blind hole.

權(quán)利要求

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