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Method of filling recess

專利號
US11177133B2
公開日期
2021-11-16
申請人
TOKYO ELECTRON LIMITED（JP Tokyo）
發(fā)明人
Satoshi Takagi; Yoshimasa Watanabe
IPC分類
H01L21/02; H01L21/268
技術(shù)領(lǐng)域
gas,laser,film,501a,amorphous,recess,silicon,annealing,in,wafer
地域： Tokyo

摘要

A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess.

說明書

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2018-218602, filed on Nov. 21, 2018, the entire contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a method of filling a recess.

BACKGROUND

A method of embedding an Al alloy layer in an opening formed in an insulating film on a semiconductor substrate has been known in which a first Al alloy layer is formed, the first Al alloy layer is caused to flow by radiating laser light, and then a second Al alloy layer is formed on the first Al alloy layer (see, for example, Patent Document 1).

PRIOR ART DOCUMENT Patent Document

Patent Document 1: Japanese Laid-open Publication No. 5-275369

SUMMARY

A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the present disclosure, and together with the general description given above and the detailed description of the embodiments given below, serve to explain the principles of the present disclosure.

權(quán)利要求

1
What is claimed is:1. A method of filling a recess, comprising: heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess,wherein heating the amorphous semiconductor film comprises adjusting a temperature of heating the amorphous semiconductor film and a moving speed of a position to which the laser light is radiated with respect to the amorphous semiconductor film based on a film type of the amorphous semiconductor film such that a seam formed in the recess is removed without crystallizing the amorphous semiconductor film embedded in the recess.2. The method of claim 1, further comprising: embedding the amorphous semiconductor film in the recess by repeating forming the amorphous semiconductor film in the recess and etching a part of the amorphous semiconductor film.3. The method of claim 2, wherein embedding the amorphous semiconductor film comprises forming the amorphous semiconductor film such that an opening of the recess is closed.4. The method of claim 1, wherein heating the amorphous semiconductor film comprises radiating the laser light while a position to which the laser light is radiated is moved with respect to the recess.5. The method of claim 1, wherein heating the amorphous semiconductor film comprises radiating the laser light while the recess is moved in a state in which a position to which the laser light is radiated is fixed.6. The method of claim 1, wherein the amorphous semiconductor film is an amorphous silicon film, an amorphous silicon germanium film, or an amorphous germanium film.
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