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Method of filling recess

專利號
US11177133B2
公開日期
2021-11-16
申請人
TOKYO ELECTRON LIMITED(JP Tokyo)
發(fā)明人
Satoshi Takagi; Yoshimasa Watanabe
IPC分類
H01L21/02; H01L21/268
技術(shù)領(lǐng)域
gas,laser,film,501a,amorphous,recess,silicon,annealing,in,wafer
地域: Tokyo

摘要

A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess.

說明書

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

FIGS. 1A to 1E are cross-sectional views illustrating steps of an exemplary method of filling a recess.

FIG. 2 is a vertical cross-sectional view illustrating an exemplary configuration of a vertical heat treatment apparatus.

FIG. 3 is a view for explaining a reaction tube of the vertical heat treatment apparatus of FIG. 2.

FIG. 4 is a schematic view illustrating an exemplary configuration of a laser annealing apparatus.

FIGS. 5A and 5B are views illustrating exemplary results before and after laser annealing treatment.

FIG. 6 is an explanatory view representing seam improvement effect when a temperature and a sweep speed are changed in laser annealing treatment.

DETAILED DESCRIPTION

Reference will now be made in detail to various embodiments, examples of which are illustrated in the accompanying drawings. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one of ordinary skill in the art that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures, systems, and components have not been described in detail so as not to unnecessarily obscure aspects of the various embodiments.

權(quán)利要求

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