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Method of filling recess

專利號
US11177133B2
公開日期
2021-11-16
申請人
TOKYO ELECTRON LIMITED(JP Tokyo)
發(fā)明人
Satoshi Takagi; Yoshimasa Watanabe
IPC分類
H01L21/02; H01L21/268
技術領域
gas,laser,film,501a,amorphous,recess,silicon,annealing,in,wafer
地域: Tokyo

摘要

A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess.

說明書

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While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.

權利要求

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