Method for dicing integrated fan-out packages without seal rings
地域：
Hsinchu
摘要
A method includes attaching a first die and a second die to a carrier; forming a molding material between the first die and second die; and forming a redistribution structure over the first die, the second die and the molding material, the redistribution structure includes a first redistribution region; a second redistribution region; and a dicing region between the first redistribution region and the second redistribution region. The method further includes forming a first opening and a second opening in the dicing region, the first opening and the second opening extending through the redistribution structure and exposing the molding material; and separating the first die and the second die by cutting through a portion of the molding material aligned with the dicing region from a second side of the molding material toward the first side of the molding material, the second side opposing the first side.
說明書
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This application claims priority to U.S. Provisional Patent Application No. 62/593,019 filed Nov. 30, 2017, entitled “Integrated Fan-Out Packages and Methods of Forming the Same,” which application is hereby incorporated by reference in its entirety.
The semiconductor industry has experienced rapid growth due to continuous improvements in the integration density of a variety of electronic components (e.g., transistors, diodes, resistors, capacitors, etc.). For the most part, this improvement in integration density has come from repeated reductions in minimum feature size, which allows more components to be integrated into a given area. As the demand for even smaller electronic devices has grown recently, there has grown a need for smaller and more creative packaging techniques of semiconductor dies.
An example of these packaging technologies is the Package-on-Package (POP) technology. In a PoP package, a top semiconductor packages is stacked on top of a bottom semiconductor package to allow high level of integration and component density. Another example is the Multi-Chip-Module (MCM) technology, where multiple semiconductor dies are packaged in one semiconductor package to provide semiconductor devices with integrated functionalities.
權(quán)利要求
What is claimed is:1. A method comprising:attaching a first die and a second die to a carrier; forming a molding material between the first die and the second die; forming a redistribution structure over the first die, the second die and the molding material, the redistribution structure comprising:a first redistribution region over the first die; a second redistribution region over the second die; and a dicing region between the first redistribution region and the second redistribution region, wherein the redistribution structure is free of a seal ring; after forming the redistribution structure, forming a first opening and a second opening in the dicing region by performing a pre-cut process, the pre-cut process removing portions of the dicing region using a first laser beam and a second laser beam to form the first opening and the second opening, respectively, the pre-cut process being different from a patterning process performed to pattern a topmost layer of the redistribution structure distal from the carrier, the first opening and the second opening extending through the redistribution structure and exposing a first side of the molding material; attaching the redistribution structure to a tape after forming the first opening and the second opening; and separating the first die and the second die by cutting through a portion of the molding material aligned with the dicing region using a blade, wherein the cutting is performed from a second side of the molding material toward the first side of the molding material, the second side opposing the first side, wherein during the cutting, the blade does not cut into the tape. 2. The method of claim 1 , wherein the dicing region is free of electrically conductive features. 3. The method of claim 1 , wherein the first opening and the second opening are physically separated from each other. 4. The method of claim 1 , wherein the first opening and the second opening extend into the molding material by a depth between about 20 μm and about 100 μm. 5. The method of claim 1 , wherein the first laser beam and the second laser beam are applied to the dicing region at a same time. 6. The method of claim 1 , wherein the first opening is laterally between the first die and the second opening, wherein a first width of the blade is smaller than a second width between a first sidewall of the first opening closest to the first die and a second sidewall of the second opening closest to the second die. 7. The method of claim 6 , wherein during the cutting, the blade is laterally between the first sidewall of the first opening and the second sidewall of the second opening. 8. The method of claim 1 , further comprising, before separating the first die and the second die:forming a first conductive pillar in the molding material adjacent to the first die; forming a second conductive pillar in the molding material adjacent to the second die; and attaching a first package and a second package to the first conductive pillar and the second conductive pillar, respectively. 9. A method comprising:forming a first conductive pillar and a second conductive pillar over a first side of a carrier; attaching a first die and a second die to the first side of the carrier, the first die and the second die being adjacent to the first conductive pillar and the second conductive pillar, respectively; forming a molding material over the first side of the carrier, the molding material extending along sidewalls of the first die, sidewalls of the second die, sidewalls of the first conductive pillar and sidewalls of the second conductive pillar; forming a redistribution structure over the first die, the second die and the molding material, the redistribution structure comprising a first redistribution region over the first die, a second redistribution region over the second die, and a dicing region between the first redistribution region and the second redistribution region, wherein the redistribution structure is free of a seal ring, wherein forming the redistribution structure comprises performing a patterning process to pattern a topmost layer of the redistribution structure distal from the carrier; after patterning the topmost layer of the redistribution structure, removing portions of the redistribution structure in the dicing region by a pre-cut process, the pre-cut process using laser beams to form a first opening proximate to the first die and a second opening proximate to the second die, the pre-cut process being different from the patterning process, the first opening being separated from the second opening by a remaining portion of the redistribution structure in the dicing region; after removing portions of the redistribution structure, attaching the redistribution structure to a tape; de-bonding the carrier; electrically coupling a first semiconductor package to the first conductive pillar; electrically coupling a second semiconductor package to the second conductive pillar; and after electrically coupling the first semiconductor package and electrically coupling the second semiconductor package, dicing, from a backside of the first die, through the molding material using a blade, the dicing separating the first die from the second die, the blade having a first width larger than a second width of the remaining portion of the redistribution structure, wherein the blade does not cut into the tape during the dicing. 10. The method of claim 9 , wherein removing portions of the redistribution structure in the dicing region further removes portions of the molding material such that the first opening and the second opening extend into the molding material. 11. The method of claim 9 , wherein a first sidewall of the first opening closest to the first die is spaced apart from a second sidewall of the second opening closest to the second die by a third width, and wherein the first width is smaller than the third width. 12. The method of claim 11 , wherein during the dicing, the blade is laterally between, and does not contact, the first sidewall of the first opening and the second sidewall of the second opening. 13. A method comprising:forming a first conductive pillar and a second conductive pillar on a first side of a carrier; attaching a first die and a second die to the first side of the carrier, the first die being adjacent to the first conductive pillar and the second die being adjacent to the second conductive pillar; embedding the first die, the second die, the first conductive pillar, and the second conductive pillars in a molding material; forming a redistribution structure over the molding material, the redistribution structure comprising a first redistribution region over the first die, a second redistribution region over the second die, and a dicing region between the first redistribution region and the second redistribution region, the redistribution structure being free of a seal ring, wherein forming the redistribution structure comprises patterning a topmost layer of the redistribution structure distal from the carrier using a patterning process; after patterning the topmost layer of the redistribution structure, forming a first recess and a second recess from a first side of the redistribution structure distal to the carrier by performing a pre-cut process different from the patterning process, the pre-cut process removing at least portions of the dicing region using laser, the first recess and the second recess extending through the redistribution structure and into the molding material, the first recess and the second recess being separated by a remaining portion of the dicing region, wherein the first recess includes a first sidewall distal from the remaining portion of the dicing region, a second sidewall parallel to the first sidewall, and a first bottom surface connecting the first sidewall and the second sidewall, wherein the second recess includes a third sidewall distal from the remaining portion of the dicing region, a fourth sidewall parallel to the third sidewall, and a second bottom surface connecting the third sidewall and the fourth sidewall; after forming the first recess and the second recess, attaching the redistribution structure to a dicing tape; removing the carrier; bonding a first package to the first conductive pillar and bonding a second package to the second conductive pillar; and removing a portion of the molding material aligned with the remaining portion of the dicing region by cutting the molding material using a blade, wherein the cutting is performed from a first side of the molding material distal to the redistribution structure, wherein a width of the blade is wider than a width of the remaining portion of the dicing region, wherein during the cutting, the blade contacts the second sidewall and the fourth sidewall but does not contact the first sidewall or the third sidewall, and the blade does not cut into the dicing tape. 14. The method of claim 13 , wherein during the cutting, the blade is laterally between the first sidewall of the first recess and the third sidewall of the second recess. 15. The method of claim 1 , wherein after separating the first die and the second die, the molding material has a lower portion contacting the redistribution structure and having an upper portion distal from the redistribution structure, wherein a first sidewall of the lower portion of the molding material is parallel to a second sidewall of the upper portion of the molding material. 16. The method of claim 15 , wherein the molding material further comprises a lower surface between and connecting the first sidewall and the second sidewall, wherein the lower surface of the molding material is perpendicular to the first sidewall and the second sidewall. 17. The method of claim 13 , wherein a width of the dicing region is about 40 μm. 18. The method of claim 13 , wherein forming the first recess and the second recess comprises forming the first recess and the second recess by removing at least portions of the dicing region using a first laser beam and a second laser beam, respectively. 19. The method of claim 18 , wherein the first laser beam and the second laser beam are applied to the dicing region at a same time. 20. The method of claim 13 , further comprising adjusting a power of the laser in accordance with a composition of the dicing region, depths of the first and second recesses, or a target processing speed for forming the first and second recesses.
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