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Method of manufacturing a semiconductor device having redistribution layer including a dielectric layer made from a low-temperature cure polyimide

專利號(hào)
US11177165B2
公開日期
2021-11-16
申請(qǐng)人
Taiwan Semiconductor Manufacturing Company, Ltd.(TW Hsin-Chu)
發(fā)明人
Zi-Jheng Liu; Yu-Hsiang Hu; Hung-Jui Kuo
IPC分類
H01L21/768; H01L21/56; H01L23/498; H01L23/525; H01L23/532; H01L23/538; H01L23/31
技術(shù)領(lǐng)域
layer,may,in,be,ghi,polyimide,first,vias,thk,as
地域: Hsinchu

摘要

A method of manufacturing a semiconductor device includes the step of positioning a patterned mask over a dielectric layer. The dielectric layer comprises a low-temperature cure polyimide. The method further includes the steps of exposing a first surface of the dielectric layer through the patterned mask to an I-line wavelength within an I-line stepper, and developing the dielectric layer to form an opening.

說明書

The PACs may be photoactive components such as photoacid generators, photobase generators, free-radical generators, or the like, and the PACs may be positive-acting or negative-acting. In an embodiment in which the PACs are a photoacid generator, the PACs may comprise halogenated triazines, onium salts, diazonium salts, aromatic diazonium salts, phosphonium salts, sulfonium salts, iodonium salts, imide sulfonate, oxime sulfonate, disulfone, o-nitrobenzylsulfonate, sulfonated esters, halogenerated sulfonyloxy dicarboximides, diazodisulfones, α-cyanooxyamine-sulfonates, imidesulfonates, ketodiazosulfones, sulfonyldiazoesters, 1,2-di(arylsulfonyl)hydrazines, nitrobenzyl esters, and the s-triazine derivatives, suitable combinations of these, and the like.

Specific examples of photoacid generators that may be used include α.-(trifluoromethylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarbo-ximide (MDT), N-hydroxy-naphthalimide (DDSN), benzoin tosylate, t-butylphenyl-α-(p-toluenesulfonyloxy)-acetate and t-butyl-α-(p-toluenesulfonyloxy)-acetate, triarylsulfonium and diaryliodonium hexafluoroantimonates, hexafluoroarsenates, trifluoromethanesulfonates, iodonium perfluorooctanesulfonate, N-camphorsulfonyloxynaphthalimide, N-pentafluorophenylsulfonyloxynaphthalimide, ionic iodonium sulfonates such as diaryl iodonium (alkyl or aryl) sulfonate and bis-(di-t-butylphenyl)iodonium camphanylsulfonate, perfluoroalkanesulfonates such as perfluoropentanesulfonate, perfluorooctanesulfonate, perfluoromethanesulfonate, aryl (e.g., phenyl or benzyl) triflates such as triphenylsulfonium triflate or bis-(t-butylphenyl)iodonium triflate; pyrogallol derivatives (e.g., trimesylate of pyrogallol), trifluoromethanesulfonate esters of hydroxyimides, α,α′-bis-sulfonyl-diazomethanes, sulfonate esters of nitro-substituted benzyl alcohols, naphthoquinone-4-diazides, alkyl disulfones, and the like.

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