Method of manufacturing a semiconductor device having redistribution layer including a dielectric layer made from a low-temperature cure polyimide
摘要
說明書
In a non-limiting, illustrative embodiment the low-temperature cured polyimide composition may include N-methyl-2-pyrrolidone (NMP), polyamic acid ester, ethyl lactate (EL), tetraethylene glycol dimathacrylate or combinations thereof. For example, the low-temperature cured polyimide composition my comprise 45-55% N-methyl-2-pyrrolidone (NMP), 25-35% polyamic acid ester, 10-15% ethyl lactate (EL), and 1-5% tetraethylene glycol dimathacrylate.
In an embodiment the low-temperature cured polyimide resin and the PACs, along with any desired additives or other agents, are added to the low-temperature cured polyimide solvent for application. For example, the low-temperature cured polyimide resin may have a concentration of between about 5% and about 50%, such as about 25%, while the PACs may have a concentration of between about 0.1% and about 20%, such as about 5%. Once added, the mixture is then mixed in order to achieve an even composition throughout the low-temperature cured polyimide composition in order to ensure that there are no defects caused by an uneven mixing or non-constant composition. Once mixed together, the low-temperature cured polyimide composition may either be stored prior to its usage or else used immediately.
